Origin of Coulomb blockade oscillations in single-electron transistors fabricated with granulated Cr/Cr2O3 resistive microstrips
نویسندگان
چکیده
The purpose of our work is to evaluate single-electron devices fabricated using resistive microstrips and to investigate its applicability for single-electron logic. In this article, we present our work on the fabrication and characterization of SETs with gold islands and CrOx resistive microstrips. The electron transport mechanism of CrOx resistors is also discussed and hypothesis of two types of possible junctions are given as the explanation for the experimental results. q 2005 Elsevier Ltd. All rights reserved.
منابع مشابه
Fabrication and characterization of Au island single-electron transistors with CrOx step edge junctions
Single-electron transistors fabricated using Au islands and CrOx resistive microstrips are reported. To investigate the occurrence of Coulomb blockade in these devices, three types of device designs have been tested. Typical single-electron behavior, conductance modulation by the gate, is observed in the devices which had small overlap area with the gold island. Electron transport mechanism of ...
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ورودعنوان ژورنال:
- Microelectronics Journal
دوره 36 شماره
صفحات -
تاریخ انتشار 2005